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Freescale Semiconductor Technical Data
Document Number: MRF8P20140WH Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1880 MHz 1920 MHz 2025 MHz Gps (dB) 16.0 16.0 15.9 D (%) 42.8 43.7 42.0 Output PAR (dB) 8.0 8.1 8.1 ACPR (dBc) --31.0 --32.6 --31.2
MRF8P20140WHR3 MRF8P20140WHSR3
1880-2025 MHz, 24 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point 170 Watts (1,2) Features * Designed for Wide Instantaneous Bandwidth Applications. VBWres 240 MHz. * Designed for Wideband Applications that Require 160 MHz Signal Bandwidth * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. * NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14.
CASE 465M-01, STYLE 1 NI-780-4 MRF8P20140WHR3
CASE 465H-02, STYLE 1 NI-780S-4 MRF8P20140WHSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (3) CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 125 225 140 0.66 Unit Vdc Vdc Vdc C C C W W/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Continuous use at maximum temperature will affect MTTF.
(c) Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P20140WHR3 MRF8P20140WHSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz Case Temperature 96C, 130 W CW(2), 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz Symbol RJC Value (1) 0.68 0.40 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(3)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 5 1
Unit
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (3,4) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDA = 500 mAdc) Fixture Gate Quiescent Voltage (5) (VDD = 28 Vdc, IDA = 500 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc)
Adc Adc Adc
VGS(th) VGSA(Q) VGGA(Q) VDS(on)
1.1 -- 4.5 0.1
1.8 2.6 5.2 0.2
2.6 -- 6.0 0.3
Vdc Vdc Vdc Vdc
Functional Tests (4,6,7) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Performance (7) Gps D PAR ACPR 15.0 37.5 7.3 -- 16.0 41.2 7.7 --31.9 18.0 -- -- --29.5 dB % dB dBc
Typical Broadband -- (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1880 MHz 1920 MHz 2025 MHz Gps (dB) 16.0 16.0 15.9 D (%) 42.8 43.7 42.0 Output PAR (dB) 8.0 8.1 8.1 ACPR (dBc) --31.0 --32.6 --31.2
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3. Each side of device measured separately. 4. VDDA and VDDB must be tied together and powered by a single DC power supply. 5. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 6. Part internally matched both on input and output. 7. Measurement made with device in a Symmetrical Doherty configuration. (continued)
MRF8P20140WHR3 MRF8P20140WHSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1880--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point (2) IMD Symmetry @ 24 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 145 MHz Bandwidth @ Pout = 24 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) (3) P1dB P3dB IMDsym -- -- -- 140 170 (3) 133 -- -- -- W W MHz
VBWres GF G P1dB
-- -- -- --
240 0.25 0.013 0.003
-- -- -- --
MHz dB dB/C dB/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 3
R2
VGGA
C18
VDDA C19
R3
C15 C4
C16 C14
C6 C7 C1 C2* C9 Z1 C3* R1 C5 C10 C11 C26
R6 C23 C CUT OUT AREA
C12*
MRF8P20140W Rev. 1.2
C17 P C21 C13*
R7
C22 C8 R5 C20
C25 R4 VGGB C24 VDDB
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part C1 C2, C3 C4, C8, C18, C24 C5 C6, C10, C12, C13, C14, C20 C7, C11 C9, C17 C15, C21 C16, C22 C19, C25 C23 C26 R1 R2, R3, R4, R5 R6, R7 Z1 PCB Description 0.6 pF Chip Capacitor 8.2 pF Chip Capacitors 10 F, 50 V Chip Capacitors 1.2 pF Chip Capacitor 12 pF Chip Capacitors 10 F, 32 V Chip Capacitors 0.1 pF Chip Capacitors 6.8 F, 50 V Chip Capacitors 2.2 F, 100 V Chip Capacitors 220 F, 100 V Chip Capacitors 0.2 pF Chip Capacitor 1.5 pF Chip Capacitor 50 , Chip Resistor 1.5 k, 1/4 W Chip Resistors 2.2 , 1/4 W Chip Resistors 1700--2000 MHz Band 90, 3 dB Hybrid Coupler 0.020, r = 3.5 Part Number ATC600F0R6BT250XT ATC600F8R2BT250XT GRM55DR61H106KA88L ATC600F1R2BT250XT ATC600F120JT250XT GRM32ER61H106KA12L ATC600F0R1BT250XT C4532X7R1H685KT C3225X7R2A225KT EEV--FK2A221M ATC600F0R2BT250XT ATC600F1R5BT250XT ATCCW12010T0050GBK CRCW12061K50FKEA CRCW12062R2FNEA 1P503S R04350B Manufacturer ATC ATC Murata ATC ATC Murata ATC TDK TDK Panasonic--ECG ATC ATC ATC Vishay Vishay Anaren Rogers
MRF8P20140WHR3 MRF8P20140WHSR3 4 RF Device Data Freescale Semiconductor
Single--ended

4 4
Quadrature combined
4
Doherty
2
2
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 17 16.8 16.6 Gps, POWER GAIN (dB) 16.4 16.2 16 15.8 15.6 15.4 15.2 15 1880 1900 1920 1940 1960 1980 ACPR 2000 2020 VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, 30 MHz Carrier Spacing, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF PARC Gps IM3 D 44 42 40 38 36 --30 --31 ACPR (dBc) --32 --33 --34 --35 2040
--1 --1.2 PARC (dB) --1.4 --1.6 --1.8 --2
--25 --26 --27 --28 --29 --30
f, FREQUENCY (MHz)
Figure 4. 2-Carrier Output Peak- -Average Ratio Compression -to(PARC) Broadband Performance @ Pout = 24 Watts Avg.
17 16.8 16.6 Gps, POWER GAIN (dB) 16.4 16.2 16 15.8 15.6 15.4 15.2 15 1880 1900 1920 1940 1960 1980 2000 2020 PARC VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF ACPR D 43 42 41 40 39 Gps --30 --31 ACPR (dBc) --32 --33 --34 --35 2040
D, DRAIN EFFICIENCY (%)
--1.6 --1.7 --1.8 --1.9 --2 --2.1 PARC (dB)
f, FREQUENCY (MHz)
Figure 5. Single-Carrier Output Peak- -Average Ratio Compression -to(PARC) Broadband Performance @ Pout = 24 Watts Avg.
--20 --30 --40 --50 --60 --70 IM5--L IM5--U IM7--U IM7--L Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1920 MHz 1 10 TWO--TONE SPACING (MHz) 100 300
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 24 W (PEP) IDQA = 500 mA, VGSB = 1.2 Vdc IM3--L
IM3--U
Figure 6. Intermodulation Distortion Products versus Two-Tone Spacing
MRF8P20140WHR3 MRF8P20140WHSR3 6 RF Device Data Freescale Semiconductor
IM3, THIRD ORDER INTERMODULATION (dBc)
TYPICAL CHARACTERISTICS
16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 1 0 --1 Gps --2 --3 --4 --5 --1 dB = 14.5 W --2 dB = 25 W --3 dB = 35 W PARC 10 0 60 30 ACPR 20 VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f = 1920 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D 40 60 D, DRAIN EFFICIENCY (%) 50 --22 --24 --26 --28 --30 --32 --34 ACPR (dBc) 2025 ACPR (dBc) 2100
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 40 50
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 1 1880 MHz 1920 MHz 1880 MHz 2025 MHz 1920 MHz 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100 60 D 50 D, DRAIN EFFICIENCY (%) 1920 MHz 2025 MHz ACPR 40 30 20 10 0 200 0 --10 --20 --30 --40 --50 --60
VDD = 28 Vdc, IDQA = 500 mA VGSB = 1.2 Vdc, Single--Carrier W--CDMA Gps 2025 MHz
1880 MHz
Figure 8. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF --10 --20 IM3, IM5, IM7 (dBc) --30 IM5--L IM3--U IM3--L IM5--U IM7--U IM7--L --60 --70 200 --40 --50 18 15 12 GAIN (dB) 9 6 3 0 1650 VDD = 28 Vdc Pin = 0 dBm IDQA = 500 mA VGSB = 1.2 Vdc
VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f1 = 1880 MHz f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Gps
1725
1800
1875
1950
2175
2250
f, FREQUENCY (MHz)
Figure 9. 2-Carrier W-CDMA Power Gain, IM3, IM5, IM7 versus Output Power
Figure 10. Broadband Frequency Response
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 7
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 (dB) Input Signal 0.1 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) --20 --30 --40 --50 --60 --70 --80 --90 --100 --110 --120 --75 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --60 --45 --30 --15 0 15 30
3.84 MHz Channel BW
+IM3 in 3.84 MHz BW 45 60 75
f, FREQUENCY (MHz)
Figure 11. CCDF W-CDMA IQ Magnitude Clipping, 2-Carrier Test Signal
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 2 4 6 8 10 12 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9
Figure 12. 2-Carrier W-CDMA Spectrum
3.84 MHz Channel BW
--ACPR in 3.84 MHz Integrated BW
+ACPR in 3.84 MHz Integrated BW
Figure 13. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
MRF8P20140WHR3 MRF8P20140WHSR3 8 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power f (MHz) 1880 1930 1990 2025 Zsource () 5.35 -- j5.03 7.39 -- j5.10 9.46 -- j1.71 9.30 + j0.80 Zload (1) () 2.36 -- j4.84 2.57 -- j4.73 2.48 -- j5.11 2.50 -- j5.30 P1dB (dBm) 49.7 50.0 50.0 50.0 (W) 93 100 100 100 D (%) 53.7 56.9 56.4 56.7 (dBm) 50.5 50.8 50.7 50.7 P3dB (W) 113 119 118 118 D (%) 56.2 59.3 58.6 59.1
(1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Figure 15. Carrier Side Load Pull Performance -- Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency f (MHz) 1880 1930 1990 2025 Zsource () 5.35 -- j5.03 7.39 -- j5.10 9.46 -- j1.71 9.30 + j0.80 Zload (1) () 6.91 -- j4.37 6.36 -- j3.60 5.61 -- j3.11 5.28 -- j2.88 P1dB (dBm) 47.6 48.0 48.0 47.9 (W) 57 63 63 61 D (%) 64.6 67.3 67.2 66.5 (dBm) 48.2 48.6 48.6 48.5 P3dB (W) 67 72 72 70 D (%) 65.2 68.3 67.8 67.3
(1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground.
Input Load Pull Tuner
Device Under Test
Output Load Pull Tuner
Z
source
Z
load
Figure 16. Carrier Side Load Pull Performance -- Maximum Efficiency Tuning
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MRF8P20140WHR3 MRF8P20140WHSR3 10 RF Device Data Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 11
MRF8P20140WHR3 MRF8P20140WHSR3 12 RF Device Data Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P20140WH and MRF8P20140WHS parts will be available for 2 years after release of MRF8P20140WH and MRF8P20140WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P20140WH and MRF8P20140WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Apr. 2011 * Initial Release of Data Sheet Description
MRF8P20140WHR3 MRF8P20140WHSR3 14 RF Device Data Freescale Semiconductor
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MRF8P20140WHR3 MRF8P20140WHSR3
Document Number: RF Device Data MRF8P20140WH Rev. 0, 4/2011 Freescale Semiconductor
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